GB75DA120UP Datasheet, PDF (1/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A

GB75DA120UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
SOT-227
PRODUCT SUMMARY
V_CES
I_C DC
V_CE(on) typical at 75 A, 25 °C
1200 V
75 A at 95 °C
3.3 V
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• HEXFRED^® low Q_rr, low switching energy
• Positive V_CE(on) temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
I_CM
Clamped inductive load current
I_LM
Diode continuous forward current
I_F
Gate to emitter voltage
V_GE
Power dissipation, IGBT
P_D
Power dissipation, diode
Isolation voltage
P_D
V_ISOL
TEST CONDITIONS
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
Any terminal to case, t = 1 min
MAX.
1200
131
89
200
200
59
39
± 20
658
369
240
135
2500
UNITS
V
A
V
W
V
Document Number: 93011 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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