GB70NA60UF_13 Datasheet, PDF (1/9 Pages) Vishay Siliconix – High Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A

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VS-GB70NA60UF
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Warp 2 Speed IGBT), 70 A
SOT-227
PRODUCT SUMMARY
V_CES
I_C DC
V_CE(on) typical at 70 A, 25 °C
I_F DC
600 V
70 A at 88 °C
2.23 V
70 A at 86 °C
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
• Low V_CE(on)
• FRED Pt^® hyperfast rectifier
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
V_CES
I_C
I_CM
I_LM
I_F
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
Peak diode forward current
I_FM
Gate to emitter voltage
V_GE
Power dissipation, IGBT
T_C = 25 °C
P_D
T_C = 80 °C
Power dissipation, diode
T_C = 25 °C
P_D
T_C = 80 °C
RMS isolation voltage
V_ISOL Any terminal to case, t = 1 min
MAX.
600
111
76
120
120
113
75
200
± 20
447
250
236
132
2500
UNITS
V
A
V
W
V
Revision: 01-Feb-12
1
Document Number: 93103
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000