GB50YF120N Datasheet, PDF (1/10 Pages) Vishay Siliconix – IGBT Fourpack Module, 50 A

GB50YF120N
Vishay High Power Products
IGBT Fourpack Module, 50 A
ECONO2 4PACK
PRODUCT SUMMARY
V_CES
I_C at T_C = 66 °C
V_CE(on) (typical)
1200 V
50 A
3.49 V
FEATURES
• Square RBSOA
• HEXFRED^® low Q_rr, low switching energy
• Positive V_CE(on) temperature coefficient
• Copper baseplate
• Low stray inductance design
• Speed 8 to 60 kHz
• Designed and qualified for industrial market
RoHS
COMPLIANT
BENEFITS
• Benchmark efficiency for SMPS appreciation in particular
HF welding
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink space saving
• PCB solderable terminals
• Low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
See fig. C.T.5
I_CM
Clamped inductive load current
I_LM
Diode continuous forward current
I_F
Diode maximum forward current
I_FM
Gate to emitter voltage
V_GE
Maximum power dissipation (IGBT)
P_D
Maximum operating junction temperature
Storage temperature range
Isolation voltage
T_J
T_Stg
V_ISOL
TEST CONDITIONS
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
MAX.
1200
66
44
150
150
40
25
150
± 20
330
180
150
- 40 to + 125
AC 2500 (MIN)
UNITS
V
A
V
W
°C
V
Document Number: 93653
Revision: 01-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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