GB15XP120KTPBF Datasheet, PDF (1/10 Pages) Vishay Siliconix – Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A

GB15XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED^® Diodes, 15 A
MTP
PRODUCT SUMMARY
V_CES
V_CE(on) typical at V_GE = 15 V
I_C at T_C = 100 °C
t_sc at T_J = 150 °C
1200 V
2.51 V
15 A
> 10 μs
FEATURES
• Generation 5 NPT 1200 V IGBT technology
• HEXFRED^® diode with ultrasoft reverse
recovery
• Very low conduction and switching losses
• Optional SMT thermistor (NTC)
• Aluminum oxide DBC
• Very low stray inductance design for high speed operation
• Short circuit 10 μs
• Square RBSOA
• Operating frequencies 8 kHz to 60 kHz
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for inverter motor drive applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
(including diode and IGBT)
I_CM
I_LM
I_F
I_FM
V_GE
V_ISOL
P_D
TEST CONDITIONS
T_C = 25 °C
T_C = 100 °C
T_C = 100 °C
Any terminal to case, t = 1 min
T_C = 25 °C
T_C = 100 °C
MAX.
1200
30
15
60
60
15
30
± 20
2500
187
75
UNITS
V
A
V
W
Document Number: 93913 For technical questions within your region, please contact one of the following:
Revision: 03-Aug-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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