GA400TD60S Datasheet, PDF (1/8 Pages) Vishay Siliconix – Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 400 A

GA400TD60S
Vishay Semiconductors
Dual INT-A-PAK Low Profile "Half-Bridge"
(Standard Speed IGBT), 400 A
Dual INT-A-PAK Low Profile
FEATURES
• Generation 4 IGBT technology
• Standard: Optimized for hard switching speed
DC to 1 kHz
• Low V_CE(on)
• Square RBSOA
• HEXFRED^® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al₂O₃ DBC
• UL approved file E78996
• Compliant to RoHS Directive 2002/95/EC
• Designed for industrial level
PRODUCT SUMMARY
V_CES
I_C DC at T_C = 25 °C
V_CE(on) (typical) at 400 A, 25 °C
600 V
750 A
1.24 V
BENEFITS
• Increased operating efficiency
• Performance optimized as output inverter stage for TIG
welding machines
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
V_CES
600
T_C = 25 °C
750
Continuous collector current
I_C ⁽¹⁾
T_C = 80 °C
525
Pulsed collector current
I_CM
1000
Clamped inductive load current
I_LM
1000
T_C = 25 °C
219
Diode continuous forward current
I_F
T_C = 80 °C
145
Gate to emitter voltage
V_GE
± 20
Maximum power dissipation (IGBT)
T_C = 25 °C
P_D
T_C = 80 °C
1563
875
RMS isolation voltage
V_ISOL
Any terminal to case
(V_RMS t = 1 s, T_J = 25 °C)
3500
Note
(1) _{Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals}
UNITS
V
A
V
W
V
Document Number: 93363
Revision: 31-May-11
For technical questions, contact: [e-mail]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000