GA200HS60S1PBF Datasheet, PDF (1/6 Pages) Vishay Siliconix – 'Half-Bridge' IGBT INT-A-PAK (Standard Speed IGBT), 200 A

GA200HS60S1PbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Standard Speed IGBT), 200 A
INT-A-PAK
FEATURES
• Generation 4 IGBT technology
• Standard: Optimized for hard switching speed
DC to 1 kHz
• Very low conduction losses
• Industry standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
V_CES
I_C DC
V_CE(on) at 200 A, 25 °C
600 V
480 A
1.13 V
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized as output inverter stage for TIG
welding machines
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
Peak switching current
Gate to emitter voltage
RMS isolation voltage
I_CM
I_LM
V_GE
V_ISOL
Maximum power dissipation
P_D
TEST CONDITIONS
T_C = 25 °C
T_C = 116 °C
Any terminal to case, t = 1 minute
T_C = 25 °C
T_C = 85 °C
MAX.
600
480
200
800
800
± 20
2500
830
430
UNITS
V
A
V
W
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Collector to emitter breakdown voltage V_BR(CES) V_GE = 0 V, I_C = 1 mA
600
Collector to emitter voltage
V_GE = 15 V, I_C = 200 A
-
V_CE(on)
V_GE = 15 V, I_C = 200 A, T_J = 125 °C
-
Gate threshold voltage
V_GE(th)
I_C = 0.25 mA
3
Collector to emitter leakage current
V_GE = 0 V, V_CE = 600 V
-
I_CES
V_GE = 0 V, V_CE = 600 V, T_J = 125 °C
-
Gate to emitter leakage current
I_GES
V_GE = ± 20 V
-
TYP.
-
1.13
1.08
4.5
0.025
-
-
MAX.
-
1.21
1.18
6
1
10
± 250
UNITS
V
mA
nA
Document Number: 94362
Revision: 03-May-10
For technical questions, contact: [e-mail]
www.vishay.com
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