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G2SBA20-M3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Glass Passivated Single-Phase Bridge Rectifier
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G2SBA20-M3, G2SBA60-M3, G2SBA80-M3
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
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Case Type GBL
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PRIMARY CHARACTERISTICS
Package
GBL
IF(AV)
1.5 A
VRRM
200 V, 600 V, 800 V
IFSM
60 A
IR
5 μA
VF at IF = 0.75 A
1.0 V
TJ max.
150 °C
Diode variations
In-line
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• Typical IR less than 0.1 μA
• High case dielectric strength
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for monitor, TV, printer, SMPS, adapter, audio equipment,
and home appliances application.
MECHANICAL DATA
Case: GBL
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL G2SBA20
Maximum repetitive peak reverse voltage
VRRM
200
Maximum RMS voltage
VRMS
140
Maximum DC blocking voltage
VDC
200
Maximum average forward rectified output current
at TA = 25 °C
IF(AV)
Peak forward surge current single sine-wave superimposed
on rated load
IFSM
Rating for fusing (t < 8.3 ms)
I2t
Operating junction and storage temperature range
TJ, TSTG
G2SBA60
600
420
600
1.5
60
15
-55 to +150
G2SBA80
800
560
800
UNIT
V
V
V
A
A
A2s
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL G2SBA20
G2SBA60
Maximum instantaneous forward
voltage drop per diode
0.75 A
VF
1.00
Maximum DC reverse current at
TA = 25 °C
rated DC blocking voltage per diode TA = 125 °C
IR
5.0
300
G2SBA80
UNIT
V
μA
Revision: 05-Aug-15
1
Document Number: 89303
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000