FESE8AT Datasheet, PDF (1/4 Pages) Vishay Siliconix – Ultrafast Rectifier

www.vishay.com
TO-220AC
FESE8AT thru FESE8GT
Vishay General Semiconductor
Ultrafast Rectifier
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Low leakage current
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
FESE8XT
PIN 1
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
PRIMARY CHARACTERISTICS
I_F(AV)
8.0 A
V_RRM
I_FSM
t_rr
50 V to 400 V
125 A
35 ns, 50 ns
V_F
0.95 V, 1.30 V
T_J max.
150 °C
MECHANICAL DATA
Case: TO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commerical grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL FESE8AT FESE8BT
Maximum repetitive peak reverse voltage V_RRM
50
100
Maximum RMS voltage
V_RMS
35
70
Maximum DC blocking voltage
V_DC
50
100
Maximum average forward
rectified current at T_C = 100 °C
I_F(AV)
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load
I_FSM
Operating storage and temperature range T_J, T_STG
FESE8CT
150
105
150
FESE8DT
200
140
200
8.0
125
- 55 to + 150
FESE8FT
300
210
300
FESE8GT UNIT
400
V
280
V
400
V
A
A
°C
Revision: 30-Jan-13
1
Document Number: 89982
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000