FC40SA50FKP Datasheet, PDF (1/10 Pages) Vishay Siliconix – Power MOSFET, 40 A

Power MOSFET, 40 A
FC40SA50FKP
Vishay Semiconductors
SOT-227
PRODUCT SUMMARY
V_DSS
R_DS(on) (typical)
I_D
Type
Package
500 V
0.084 Ω
40 A
Modules - MOSFET
SOT-227
FEATURES
• Low gate charge Q_g results in simple drive
requirement
• Improved gate, avalanche and dynamic dV/dt
ruggedness
• Fully characterized capacitance and avalanche voltage
and current
• Low R_DS(on)
• Fully insulated package
• UL pending
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
APPLICATIONS
• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
• Hard switched and high frequency circuits
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous drain current, V_GS at 10 V
Pulsed drain current
Power dissipation
Linear derating factor
I_D
I_DM ⁽¹⁾
P_D
T_C = 25 °C
T_C = 100 °C
T_C = 25 °C
Gate to source voltage
Peak diode recovery dV/dt
V_GS
dV/dt ⁽²⁾
Operating junction and storage temperature range
T_J, T_Stg
Notes
(1) _{Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)}
(2) _{ISD ≤ 40 A, dI/dt ≤ 150 A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150 °C}
MAX.
40
26
160
430
3.45
± 30
9.0
- 55 to + 150
UNITS
A
W
W/°C
V
V/ns
°C
AVALANCHE CHARACTERISTICS
PARAMETER
SYMBOL
TYP.
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
E_AS ⁽¹⁾
-
I_AR ⁽²⁾
-
E_AR ⁽²⁾
-
Notes
(1) _{Starting TJ = 25 °C, L = 1.55 mH, Rg = 25 Ω, IAS = 40 A, dV/dt = 5.5 V/ns (see fig. 12a)}
(2) _{Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)}
MAX.
1240
40
43
UNITS
mJ
A
mJ
Document Number: 94542 For technical questions within your region, please contact one of the following:
Revision: 12-May-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
1