FB180SA10P Datasheet, PDF (1/9 Pages) Vishay Siliconix – Power MOSFET, 180 A

FB180SA10P
Vishay Semiconductors
Power MOSFET, 180 A
SOT-227
PRODUCT SUMMARY
V_DSS
I_D DC
R_DS(on)
Type
Package
100 V
180 A
0.0065 
Modules - MOSFET
SOT-227
FEATURES
• Fully isolated package
• Easy to use and parallel
• Very low on-resistance
• Dynamic dV/dt rating
• Fully avalanche rated
• Simple drive requirements
• Low drain to case capacitance
• Low internal inductance
• UL pending
• Compliant to RoHS directive 2002/95/EC
DESCRIPTION
5th Generation, high current density Power MOSFETs are
paralled into a compact, high power module providing the
best combination of switching, ruggedized design, very low
on resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 W. The low thermal resistance
and easy connection to the SOT-227 package contribute to
its universal acceptance throughout the industry.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous drain current at V_GS 10 V
Pulsed drain current
Power dissipation
Linear derating factor
I_D
I_DM ⁽¹⁾
P_D
T_C = 25 °C
T_C = 100 °C
T_C = 25 °C
Gate to source voltage
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Peak diode recovery dV/dt
V_GS
E_AS ⁽²⁾
I_AR ⁽¹⁾
E_AR ⁽¹⁾
dV/dt ⁽³⁾
Operating junction and storage temperature range
Insulation withstand voltage (AC-RMS)
Mounting torque
T_J, T_Stg
V_ISO
M4 screw
Notes
(1) _{Repetitive rating; pulse width limited by maximum junction temperature (see fig. 8)}
(2) _{Starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 180 A (see fig. 12)}
(3) _{ISD 180 A, dI/dt  83 A/μs, VDD  V(BR)DSS, TJ  150 °C}
MAX.
180
120
720
480
2.7
± 20
700
180
48
5.7
- 55 to + 150
2.5
1.3
UNITS
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
kV
Nm
Document Number: 94541 For technical questions within your region, please contact one of the following:
Revision: 30-Jul-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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