ES1PA Datasheet, PDF (1/2 Pages) Vishay Siliconix – High Current Density Surface Mount Ultrafast Rectifiers

New Product
ES1PA thru ES1PD
Vishay Semiconductors
formerly General Semiconductor
0.086 (2.18)
0.074 (1.88)
High Current Density Surface Mount Ultrafast Rectifiers
Case Style SMP
Cathode band
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
Features
Reverse Voltage 50 to 200 V
Forward Current 1.0 A
Reverse Recovery Time 15 ns
• Very low profile - typical height of 1.0mm
• For surface mount application
• Glass passivated chip junction
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• Built in strain relief, ideal for automated placement
• High temperature soldering:
260°C maximum/10 seconds at terminals
• Meets MSL level 1 per J-STD-020C
0.013 (0.35)
0.004 (0.10)
0.012 (0.30)
0.000 (0.00)
0.045 (1.15)
0.033 (0.85)
0.018 (0.45)
0.006 (0.15)
0.012 (0.30) REF
Mechanical Data
Case: SMP
Terminals: Matte Tin plated (E3 Suffix) leads, solderable
per J-STD-002B and MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.0009 oz., 0.024 g
Epoxy meets UL 94V-0 flammability rating
Dimensions in inches
and (millimeters)
Mounting Pad Layout
0.105
(2.67)
0.025
(0.635)
0.030
(0.762)
0.053 (1.35)
0.041 (1.05)
0.103 (2.60)
0.087 (2.20)
0.036 (0.91)
0.024 (0.61)
0.032 (0.80)
0.016 (0.40)
0.100
(2.54)
0.050
(1.27)
Maximum Ratings & Thermal Characteristics (TA = 25°C unless otherwise noted.)
Parameter
Symbol ES1PA ES1PB ES1PC
Device marking code
EA
EB
EC
Maximum reverse voltage
VRM
50
100
150
Maximum average forward rectified current see Fig.1
IF(AV)
1.0
Peak forward surge current 10ms single half sine-wave
superimposed on rated load
IFSM
30
Typical thermal resistance ⁽¹⁾
Operating junction and Storage temperature range
RθJA
RθJL
RθJC
TJ, TSTG
105
15
20
–55 to +150
ES1PD
ED
200
Unit
V
A
A
°C/W
°C
Electrical Characteristics (TA = 25°C unless otherwise noted.)
Parameter
Symbol
Value
Unit
Maximum instantaneous forward voltage⁽²⁾ at IF=0.6A, TJ=25°C
at IF=1A, TJ=25°C
VF
0.865
0.920
V
Maximum reverse current
at rated VRM⁽²⁾
TJ = 25°C
TJ =125°C
IR
5.0
500
µA
Maximum reverse recovery time at IF=0.5A, IR=1A, Irr=0.25A trr
15
ns
Typical reverse recovery time at
TJ=25°C
at IF = 1.0A, VR = 30V dv/dt = 50A/µs, Irr = 10% IRM TJ=100°C
trr
25
30
ns
Typical reverse recovery time at
TJ=25°C
at IF = 1.0A, VR = 30V dv/dt = 50A/µs, Irr = 10% IRM TJ=100°C
Qrr
8
10
nC
Typical junction capacitance at 4.0V, 1MHz
CJ
10
pF
Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RθJL is measured at the ter-
minal of cathode band. RθJC is measured at the top centre of the body
(2) Pulse test: 300µs pulse width, 1% duty cycle
Document Number 88918
23-Sep-04
www.vishay.com
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