EDF1AM_13 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Miniature Glass Passivated Ultrafast Bridge Rectifier

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EDF1AM, EDF1BM, EDF1CM, EDF1DM
Vishay General Semiconductor
Miniature Glass Passivated Ultrafast Bridge Rectifier
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Case Style DFM
PRIMARY CHARACTERISTICS
Package
DFM
I_F(AV)
V_RRM
I_FSM
I_R
V_F at I_F = 1.0 A
t_rr
T_J max.
Diode variations
1A
50 V, 100 V, 150 V, 200 V
50 A
5 μA
1.05 V
50 ns
150 °C
Quad
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Ultrafast reverse recovery time for high
frequency
• Applicable for automative insertion
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: DFM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified current at T_A = 40 °C
Peak forward surge current single sine-wave superimposed on
rated load
Rating for fusing (t < 8.3 ms)
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
I²t
Operating junction and storage temperature range
T_J, T_STG
EDF1AM
50
35
50
EDF1BM EDF1CM
100
150
70
106
100
150
1.0
EDF1DM
200
140
200
UNIT
V
V
V
A
50
A
10
A²s
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL EDF1AM
Maximum instantaneous forward
voltage drop per diode
1.0 A
V_F
Maximum reverse current at rated DC
blocking voltage per diode
T_A = 25 °C
T_A = 125 °C
I_R
Maximum reverse recovery time per
diode
I_F = 0.5 A, I_R = 1.0 A, 
I_rr = 0.25 A
t_rr
EDF1BM EDF1CM
1.05
5.0
1.0
50
EDF1DM
UNIT
V
μA
mA
ns
Revision: 16-Aug-13
1
Document Number: 88577
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000