DTV32 Datasheet, PDF (1/4 Pages) Vishay Siliconix – High Voltage Damper Diodes

VISHAY
High Voltage Damper Diodes
DTV32 & DTV32F
Vishay Semiconductors
Major Ratings and Characteristics
I_F(AV)
V_RRM
t_rr
t_fr
V_F
10 A
1500 V
175 ns
280 ns
1.35 V
Features
• Glass passivated chip junction
• High breakdown voltage capability
• Very fast reverse recovery time
• Fast forward recovery time
• High efficiency, low switching losses
• Meets MSL level 1, per J-STD-020C
Typical Applications
For use in high resolution display TV and monitor hor-
izontal deflection application
Maximum Ratings
(T_C = 25 °C unless otherwise noted)
Parameter
Test condition
Maximum repetitive peak
reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current (fig. 1)
Peak forward surge current
ew _{8.3 ms single half sine-wave}
superimposed on rated load
N^{(JEDEC Method) at TC = 100 °C}
Operating junction and storage
temperature range
RMS Isolation voltage (DTV32F with t = 1.0 second, RH ≤ 30 %
types only) from terminals to
heatsink
TO-220AC
ITO-220AC
DTV32
2
1
DTV32F
2
1
PIN 1
PIN 1
PIN 2
CASE
PIN 2
t ^{Mechanical Data}
Case: JEDEC TO-220AC, ITO-220AC
c _{Terminals: Matte tin plated (E3 Suffix) leads, solder-}
able per J-STD-002B and MIL-STD-750, Method
u 2026
Mounting Torque: 10 in-lbs Maximum
d _{Epoxy meets UL-94V-0 Flammability rating}
Pro^Symbol
Value
Unit
V_RRM
1500
V
V_RMS
1050
V
V_DC
1500
V
I_F(AV)
10
A
I_FSM
130
A
T_J, T_STG
-55 to +150
°C
V_ISOL
4500⁽¹⁾
V
3500⁽²⁾
1500⁽³⁾
Document Number 88575
02-Nov-04
www.vishay.com
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