CQY37N_11 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Infrared Emitting Diode, 950 nm, GaAs

CQY37N
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
94 8638-2
DESCRIPTION
CQY37N is an infrared, 950 nm emitting diode in GaAs
technology molded in a miniature, clear plastic package with
lens.
FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): Ø 1.8
• Peak wavelength: _p = 950 nm
• High reliability
• Angle of half intensity:  = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector BPW17N
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Radiation source in near infrared range
PRODUCT SUMMARY
COMPONENT
CQY37N
I_e (mW/sr)
5
Note
• Test conditions see table “Basic Characteristics“
 (deg)
± 12
_P (nm)
950
t_r (ns)
800
ORDERING INFORMATION
ORDERING CODE
CQY37N
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-¾
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Reverse voltage
Forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t_p  100 μs
t3s
Leads not soldered
V_R
I_F
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
5
100
2
160
100
- 25 to + 85
- 25 to + 100
245
450
UNIT
V
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81002
Rev. 1.7, 08-Mar-11
For technical questions, contact: [e-mail]
www.vishay.com
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