CQY37N_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

CQY37N
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
94 8638-2
DESCRIPTION
CQY37N is an infrared, 950 nm emitting diode in GaAs
technology molded in a miniature, clear plastic package with
lens.
FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): ∅ 1.8
• Peak wavelength: λ_p = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector BPW17N
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Radiation source in near infrared range
PRODUCT SUMMARY
COMPONENT
CQY37N
I_e (mW/sr)
5
Note
Test conditions see table “Basic Characteristics“
ϕ (deg)
± 12
λ_P (nm)
950
t_r (ns)
800
ORDERING INFORMATION
ORDERING CODE
CQY37N
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Surge forward current
Power dissipation
t_p ≤ 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t≤3s
Thermal resistance junction/ambient
leads not soldered
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_R
I_F
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
VALUE
5
100
2
160
100
- 25 to + 85
- 25 to + 100
245
450
UNIT
V
mA
A
mW
°C
°C
°C
°C
K/W
www.vishay.com
82
For technical questions, contact: [e-mail]
Document Number: 81002
Rev. 1.6, 04-Sep-08