CQY37N_06 Datasheet, PDF (1/6 Pages) Vishay Siliconix – GaAs Infrared Emitting Diode in Miniature (T-4/3) Package

CQY37N
Vishay Semiconductors
GaAs Infrared Emitting Diode in Miniature (T-¾) Package
Description
CQY37N is a standard GaAs infrared emitting diode
in a miniature top view plastic package.
Its clear lens provides a high radiant intensity without
external optics.
The diode is case compatible to the BPW17N pho-
totransistor, allowing the user to assemble his own
optical interrupters.
94 8638
Features
• Suitable for pulse operation
• Standard T-¾ lensed miniature package
• Angle of half intensity ϕ = ± 12 °
e4
• Peak wavelength λ_p = 950 nm
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Radiation source in near infrared range
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Voltage
Forward current
Surge Forward Current
Power Dissipation
t_p ≤ 100 μs
Junction Temperature
Storage Temperature Range
Soldering Temperature
t≤3s
Thermal Resistance Junction/
Ambient
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward Voltage
I_F = 50 mA, t_p ≤ 20 ms
Breakdown Voltage
I_R = 100 μA
Junction capacitance
V_R = 0 V, f = 1 MHz, E = 0
Symbol
Value
Unit
V_R
5
V
I_F
100
mA
I_FSM
2
A
P_V
170
mW
T_j
100
°C
T_stg
- 25 to + 100
°C
T_sd
245
°C
R_thJA
450
K/W
Symbol
Min
Typ.
Max
Unit
V_F
1.3
1.6
V
V_(BR)
5
V
C_j
50
pF
Document Number 81002
Rev. 1.5, 30-Mar-06
www.vishay.com
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