CQY37N Datasheet, PDF (1/5 Pages) Vishay Siliconix – GaAs Infrared Emitting Diode in Miniature (T-3/4)Package

CQY37N
Vishay Telefunken
¾ GaAs Infrared Emitting Diode in Miniature (T– )
Package
Description
CQY37N is a standard GaAs infrared emitting diode in
a miniature top view plastic package.
Its clear lens provides a high radiant intensity without
external optics.
The diode is case compatible to the BPW17N photo-
transistor, allowing the user to assemble his own
optical interrupters.
Features
D Suitable for pulse operation
D Standard T–¾ lensed miniature package
D Angle of half intensity ϕ = ± 12°
D Peak wavelength l_p = 950 nm
D Good spectral matching to Si photodetectors
94 8639
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
T_amb = 25_C
Parameter
Reverse Voltage
Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xt_p 100 ms
xt 3 s
Symbol
Value
Unit
V_R
I_F
I_FSM
P_V
T_j
T_stg
T_sd
R_thJA
5
V
100
mA
2
A
170
mW
100
°C
–25...+100 °C
245
°C
450
K/W
Document Number 81002
Rev. 2, 20-May-99
www.vishay.de • FaxBack [phone]
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