CQY36N_11 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

CQY36N
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
94 8638
DESCRIPTION
CQY36N is an infrared, 950 nm emitting diode in GaAs
technology molded in a miniature, clear plastic package
without lens.
FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): Ø 1.8
• Peak wavelength: _p = 950 nm
• High reliability
• Angle of half intensity:  = ± 55°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector BPW16N
• Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
APPLICATIONS
• Radiation source in near infrared range
PRODUCT SUMMARY
COMPONENT
CQY36N
I_e (mW/sr)
1.5
Note
• Test conditions see table “Basic Characteristics“
 (deg)
± 55
_P (nm)
950
t_r (ns)
800
ORDERING INFORMATION
ORDERING CODE
CQY36N
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-¾
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Reverse voltage
Forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t_p  100 μs
t3s
leads not soldered
V_R
I_F
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
5
100
2
160
100
- 25 to + 85
- 25 to + 100
245
450
UNIT
V
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81001
Rev. 1.8, 16-May-11
For technical questions, contact: [e-mail]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000