CQY36N_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

CQY36N
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
94 8638
DESCRIPTION
CQY36N is an infrared, 950 nm emitting diode in GaAs
technology molded in a miniature, clear plastic package
without lens.
FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): ∅ 1.8
• Peak wavelength: λ_p = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 55°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector BPW16N
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Radiation source in near infrared range
PRODUCT SUMMARY
COMPONENT
CQY36N
I_e (mW/sr)
1.5
Note
Test conditions see table “Basic Characteristics“
ϕ (deg)
± 55
λ_P (nm)
950
t_r (ns)
800
ORDERING INFORMATION
ORDERING CODE
CQY36N
PACKAGING
Bulk
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Surge forward current
Power dissipation
t_p ≤ 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t≤3s
Thermal resistance junction/ambient
leads not soldered
Note
T_amb = 25 °C, unless otherwise specified
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-¾
SYMBOL
V_R
I_F
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
VALUE
5
100
2
160
100
- 25 to + 85
- 25 to + 100
245
450
UNIT
V
mA
A
mW
°C
°C
°C
°C
K/W
www.vishay.com
78
For technical questions, contact: [e-mail]
Document Number: 81001
Rev. 1.7, 04-Sep-08