CPV364M4UPBF Datasheet, PDF (1/11 Pages) Vishay Siliconix – IGBT SIP Module (Ultrafast IGBT)

CPV364M4UPbF
Vishay High Power Products
IGBT SIP Module
(Ultrafast IGBT)
IMS-2
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
I_RMS per phase (3.5 kW total)
with T_C = 90 °C
T_J
12 A_RMS
125 °C
Supply voltage
360 Vdc
Power factor
0.8
Modulation depth (see fig. 1)
115 %
V_CE(on) (typical)
at I_C = 10 A, 25 °C
1.56 V
FEATURES
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED^® soft ultrafast diodes
RoHS
COMPLIANT
• Optimized for high speed over 5 kHz
See fig. 1 for current vs. frequency curve
• Totally lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION
The IGBT technology is the key to Vishay’s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
V_CES
Continuous collector current, each IGBT I_C
Pulsed collector current
Clamped inductive load current
I_CM ⁽¹⁾
I_LM ⁽²⁾
T_C = 25 °C
T_C = 100 °C
Diode continuous forward current
I_F
T_C = 100 °C
Diode maximum forward current
I_FM
Gate to emitter voltage
V_GE
Isolation voltage
V_ISOL t = 1 min, any terminal to case
Maximum power dissipation, each IGBT P_D
Operating junction and storage
temperature range
T_J, T_Stg
T_C = 25 °C
T_C = 100 °C
Soldering temperature
For 10 s, (0.063" (1.6 mm) from case)
Mounting torque
6-32 or M3 screw
Notes
(1) _{Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)}
(2) _{VCC = 80 % (VCES), VGE = 20 V, L = 10 µH, RG = 10 Ω (see fig. 19)}
MAX.
600
20
10
60
60
9.3
60
± 20
2500
63
25
- 40 to + 150
300
5 to 7
(0.55 to 0.8)
UNITS
V
A
V
V_RMS
W
°C
lbf ⋅ in
(N ⋅ m)
Document Number: 94489
Revision: 01-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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