CPV364M4KPBF Datasheet, PDF (1/11 Pages) International Rectifier – IGBT SIP MODULE

CPV364M4KPbF
Vishay High Power Products
IGBT SIP Module
(Short Circuit Rated Ultrafast IGBT)
IMS-2
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
I_RMS per phase (3.1 kW total)
with T_C = 90 °C
T_J
11 A_RMS
125 °C
Supply voltage
360 Vdc
Power factor
0.8
Modulation depth (see fig. 1)
V_CE(on) (typical)
at I_C = 13 A, 25 °C
115 %
1.8 V
FEATURES
• Short circuit rated ultrafast: Optimized for high
speed > 5.0 kHz, and short circuit rated to 10 µs
at 125 °C, V_GE = 15 V
RoHS
COMPLIANT
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED^® soft ultrafast diodes
• Totally lead (Pb)-free and RoHS compliant
• Designed and qualified for industrial level
DESCRIPTION
The IGBT technology is the key to Vishay´s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Short circuit withstand time
Gate to emitter voltage
Isolation voltage
Maximum power dissipation, each IGBT
Operating junction and storage temperature range
Soldering temperature
SYMBOL
V_CES
I_C
I_CM ⁽¹⁾
I_LM ⁽²⁾
t_SC
V_GE
V_ISOL
P_D
T_J, T_Stg
TEST CONDITIONS
T_C = 25 °C
T_C = 100 °C
T_C = 100 °C
t = 1 min, any terminal to case
T_C = 25 °C
T_C = 100 °C
For 10 s, (0.063" (1.6 mm) from case)
Mounting torque
6-32 or M3 screw
Notes
(1) _{Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)}
(2) _{VCC = 80 % (VCES), VGE = 20 V, L = 10 µH, RG = 10 Ω (see fig. 19)}
MAX.
600
24
13
48
48
9.3
± 20
2500
63
25
- 55 to + 150
300
5 to 7
(0.55 to 0.8)
UNITS
V
A
µs
V
V_RMS
W
°C
lbf ⋅ in
(N ⋅ m)
Document Number: 94488
Revision: 01-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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