CPV363M4UPBF Datasheet, PDF (1/11 Pages) Vishay Siliconix – IGBT SIP Module (Ultrafast IGBT)

CPV363M4UPbF
Vishay High Power Products
IGBT SIP Module
(Ultrafast IGBT)
FEATURES
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED^® soft ultrafast diodes
RoHS
COMPLIANT
IMS-2
• Optimized for medium speed 1 to 10 kHz
See fig. 1 for current vs. frequency curve
• Totally lead (Pb)-free
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
I_RMS per phase (2.1 kW total)
with T_C = 90 °C
T_J
7.1 A_RMS
125 °C
Supply voltage
360 Vdc
Power factor
0.8
Modulation depth (see fig. 1)
115 %
V_CE(on) (typical)
at I_C = 6.8 A, 25 °C
1.7 V
• Designed and qualified for industrial level
DESCRIPTION
The IGBT technology is the key to Vishay’s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
V_CES
Continuous collector current, each IGBT
I_C
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
Isolation voltage
I_CM ⁽¹⁾
I_LM ⁽²⁾
I_F
I_FM
V_GE
V_ISOL
Maximum power dissipation, each IGBT
P_D
Operating junction and storage temperature range T_J, T_Stg
Soldering temperature
TEST CONDITIONS
T_C = 25 °C
T_C = 100 °C
T_C = 100 °C
Any terminal to case, t = 1 min
T_C = 25 °C
T_C = 100 °C
For 10 s, (0.063" (1.6 mm) from case)
Mounting torque
6-32 or M3 screw
Notes
(1) _{Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)}
(2) _{VCC = 80 % (VCES), VGE = 20 V, L = 10 µH, RG = 23 Ω (see fig. 19)}
MAX.
600
13
6.8
40
40
6.1
40
± 20
2500
36
14
- 40 to + 150
300
5 to 7
(0.55 to 0.8)
UNITS
V
A
V
V_RMS
W
°C
lbf ⋅ in
(N ⋅ m)
Document Number: 94486
Revision: 01-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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