CPV362M4FPBF Datasheet, PDF (1/9 Pages) Vishay Siliconix – IGBT SIP Module

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CPV362M4FPbF
Vishay Semiconductors
IGBT SIP Module (Fast IGBT)
IMS-2
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE
V_CES
I_RMS per phase (3.1 kW total)
with T_C = 90 °C
T_J
Supply voltage
Power factor
600 V
11 A
125 °C
360 V_DC
0.8
Modulation depth See fig. 1
115 %
V_CE(on) (typical)
at I_C = 4.8 A, 25 °C
Speed
1.41 V
1 kHz to 8 kHz
Package
SIP
Circuit
Three phase inverter
FEATURES
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
• HEXFRED^® soft ultrafast diodes
• Optimized for medium speed, see fig. 1 for
current vs. frequency curve
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to the advanced line of IMS
(Insulated Metal Substrate) power modules. These modules
are more efficient than comparable bipolar transistor
modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
V_CES
Continuous collector current, each
IGBT
I_C
Pulsed collector current
I_CM
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
Isolation voltage
Maximum power dissipation, each
IGBT
Operating junction and 
storage temperature range
Soldering temperature
Mounting torque
I_LM
I_F
I_FM
V_GE
V_ISOL
P_D
T_J, T_Stg
TEST CONDITIONS
T_C = 25 °C
T_C = 100 °C
Repetitive rating; V_GE = 20 V, 
pulse width limited by maximum 
junction temperature. See fig. 20
V_CC = 80 % (V_CES), V_GE = 20 V, 
L = 10 μH, R_G = 50  See fig. 19
T_C = 100 °C
Any terminal to case, t = 1 min
T_C = 25 °C
T_C = 100 °C
For 10 s
6-32 or M3 screw
MAX.
600
8.8
4.8
UNITS
V
26
A
800
3.4
26
± 20
2500
23
9.1
V
V_RMS
W
-40 to +150
300 (0.063" (1.6 mm) from case)
5 to 7
(0.55 to 0.8)
°C
lbf · in
(N · m)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each diode, one diode in conduction
Case to sink, flat, greased surface
Weight of module
R_thJC (IGBT)
R_thJC (diode)
R_thCS (module)
TYP.
-
-
0.1
20 (0.7)
MAX.
5.5
9.0
-
-
UNITS
°C/W
g (oz.)
Revision: 10-Jun-15
1
Document Number: 94361
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000