BZX85B Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon Epitaxial Planar Z-Diodes

Silicon Epitaxial Planar Z–Diodes
Features
D Sharp edge in reverse characteristics
D Low reverse current
D Low noise
D Very high stability
BZX85B...
Vishay Telefunken
Applications
Voltage stabilization
94 9369
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Power dissipation
Junction temperature
l=4mm, T_L=25°C
Storage temperature range
Type
Symbol Value Unit
P_V
1.3
W
T_j
175
°C
T_stg –65...+175 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, T_L=constant
Symbol
Value
Unit
R_thJA
110
K/W
Electrical Characteristics
T_j = 25_C
Parameter
Test Conditions
Forward voltage
I_F=200mA
Type
Symbol Min Typ Max Unit
V_F
1V
Document Number 85607
Rev. 3, 01-Apr-99
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