BZW03 Datasheet, PDF (1/6 Pages) NXP Semiconductors – Voltage regulator diodes

BZW03-Series
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
• Glass passivated junction
• Hermetically sealed package
e2
• Clamping time in picoseconds
949588
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Voltage regulators and transient suppression circuits
Mechanical Data
Case: SOD-64 Sintered glass case
Weight: approx. 858 mg
Packaging Codes/Options:
TAP / 2.5 k Ammopack (52 mm tape), 12.5 k/box
TR / 2.5 k 10 " reel
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Power dissipation
Repetitive peak reverse power
dissipation
l = 10 mm, T_L = 25 °C
T_amb = 45 °C
Non repetitive peak surge power t_p = 100 µs, T_j = 25 °C
dissipation
Junction temperature
Storage temperature range
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient l = 25 mm, T_L = constant
on PC board with spacing 37.5 mm
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
I_F = 1 A
Symbol
Value
Unit
P_diss
6.0
W
P_diss
1.85
W
P_ZRM
20
W
P_ZSM
1000
W
T_j
175
°C
T_stg
- 65 to + 175
°C
Symbol
Value
Unit
R_thJA
30
K/W
R_thJA
70
K/W
Symbol
Min
Typ.
Max
Unit
V_F
1.2
V
Document Number 85602
Rev. 1.4, 13-Apr-05
www.vishay.com
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