BZT55C Datasheet, PDF (1/6 Pages) TEMIC Semiconductors – Silicon Epitaxial Planar Z-Diodes

Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic
D Low reverse current level
D Very high stability
D Low noise
D Available with tighter tolerances
Applications
Voltage stabilization
BZT55C...
Vishay Telefunken
96 12009
Absolute Maximum Ratings
T_j = 25_C
Parameter
Power dissipation
Z–current
x^{Test Conditions}
R_thJA 300K/W
Junction temperature
Storage temperature range
Type
Symbol Value Unit
P_V
500
mW
I_Z
P_V/V_Z
mA
T_j
175
°C
T_stg –65...+175 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction ambient on PC board 50mmx50mmx1.6mm
Symbol
Value
Unit
R_thJA
500
K/W
Electrical Characteristics
T_j = 25_C
Parameter
Test Conditions
Forward voltage
I_F=200mA
Type
Symbol Min Typ Max Unit
V_F
1.5 V
Document Number 85601
Rev. 3, 01-Apr-99
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