BZT03_10 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Zener Diodes with Surge Current Specification

BZT03-Series
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
• Glass passivated junction
• Hermetically sealed package
• Clamping time in picoseconds
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
949539
Applications
• Medium power voltage regulators and medium
power transient suppression circuits
Mechanical Data
Case: SOD-57
Weight: approx. 369 mg
Packaging codes/options:
TAP / 5 k ammopack (52 mm tape) / 25 k/box
TR / 5 k 10" reel
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Power dissipation
l = 10 mm, T_L = 25 °C
P_V
3.25
W
T_amb = 25 °C
P_V
1.3
W
Repetitive peak reverse power
dissipation
P_ZRM
10
W
Non repetitive peak surge power
dissipation
t_p = 100 μs, T_j = 25 °C
P_ZSM
600
W
Junction temperature
T_j
175
°C
Storage temperature range
T_stg
- 65 to + 175
°C
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
l = 10 mm, T_L = constant
R_thJA
46
K/W
On PC board with spacing 25 mm
R_thJA
100
K/W
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
I_F = 0.5 A
Symbol
Min.
Typ.
Max.
Unit
V_F
1.2
V
Document Number 85599 For technical questions within your region, please contact one of the following:
Rev. 1.5, 26-Aug-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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