BZT03C39-TR Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon Zener-Diodes with Surge Current Specification

VISHAY
BZT03..Series
Vishay Semiconductors
Silicon Zener-Diodes with Surge Current Specification
Features
• Glass passivated junction
• Hermetically sealed package
• Clamping time in picoseconds
Applications
Medium power voltage regulators and medium power
transient suppression circuits
Mechanical Data
949539
Case:SOD57
Weight: 370 mg (max.500 mg)
Packaging Codes/Options:
TAP / 5 K Ammopack (52 mm tape) / 25 K/box
TR / 5 K 10" reel
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Power dissipation
Repetitive peak reverse power
dissipation
l = 10 mm, T_L = 25 °C
T_amb = 25 °C
Non repetitive peak surge power t_p = 100 µs, T_j = 25 °C
dissipation
Junction temperature
Storage temperature range
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient l = 10 mm, T_L = constant
on PC board with spacing 25 mm
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
I_F = 0.5 A
Symbol
Value
Unit
P_V
3.25
W
P_V
1.3
W
P_ZRM
10
W
P_ZSM
600
W
T_j
175
°C
T_stg
- 65 to + 175
°C
Symbol
Value
Unit
R_thJA
46
K/W
R_thJA
100
K/W
Symbol
Min
Typ.
Max
Unit
V_F
1.2
V
Document Number 85599
Rev. 4, 10-Sep-03
www.vishay.com
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