BZM55C6V2-TR Datasheet, PDF (1/8 Pages) Vishay Siliconix – Small Signal Zener Diodes

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BZM55-Series
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
V_Z range nom.
2.4 to 75
Test current I_ZT
2.5; 5
V_Z specification
Pulse current
Int. construction
Single
UNIT
V
mA
FEATURES
• Saving space
• Hermetic sealed parts
• Electrical data identical with the devices
BZT55..series, TZM..series
• Fits onto SOD-323
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
BZM55-series
BZM55-series
ORDERING CODE
BZM55-series-TR3
BZM55-series-TR
TAPED UNITS PER REEL
10 000 (8 mm tape on 13" reel)
2500 (8 mm tape on 7" reel)
MINIMUM ORDER QUANTITY
10 000
12 500
PACKAGE
PACKAGE NAME
MicroMELF
WEIGHT
12 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Power dissipation
R_thJA  300 K/W
P_tot
Junction to ambient air
Junction tie point
Junction temperature
Mounted on epoxy-glass hard tissue, fig. 1
35 μm copper clad, 0.9 mm² copper area per
electrode
R_thJA
R_thJL
T_j
Storage temperature range
T_stg
Zener current
Forward voltage
I_Z
I_F = 200 mA
V_F
VALUE
500
500
300
175
- 65 to + 175
P_tot/V_Z
1.5
UNIT
mW
K/W
K/W
°C
°C
mA
V
Rev. 2.1, 25-Nov-11
1
Document Number: 85597
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