BZM55B Datasheet, PDF (1/6 Pages) Vishay Siliconix – Silicon Epitaxial Planar Z-Diodes

Silicon Epitaxial Planar Z–Diodes
Features
D Saving space
D Hermetic sealed parts
D Fits onto SOD 323 / SOT 23 footprints
D Electrical data identical with the devices
BZT55B... / TZMB...
D Very sharp reverse characteristic
D Low reverse current level
D Very high stability
D Low noise
D Available with tighter tolerances
D V_Z–tolerance ± 2%
Applications
Voltage stabilization
BZM55B...
Vishay Telefunken
96 12315
Absolute Maximum Ratings
T_j = 25_C
Parameter
Power dissipation
Z–current
x^{Test Conditions}
R_thJA 300K/W
Junction temperature
Storage temperature range
Type
Symbol Value Unit
P_V
500
mW
I_Z
P_V/V_Z
mA
T_j
175
°C
T_stg –65...+175 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1
Junction tie point 35mm copper clad, 0.9 mm² copper area per electrode
Symbol Value Unit
R_thJA
R_thJL
500 K/W
300 K/W
Electrical Characteristics
T_j = 25_C
Parameter
Test Conditions
Forward voltage
I_F=200mA
Type
Symbol Min Typ Max Unit
V_F
1.5 V
Document Number 85597
Rev. 3, 01-Apr-99
www.vishay.de • FaxBack [phone]
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