BZG47 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Silicon Z–Diodes

Silicon Z–Diodes
Features
D Passivated junction
D High reliability
D Voltage range 3.3 V to 100 V
D Fits onto 5 mm SMD footpads
D Wave and reflow solderable
D V_Znom ±10% and ±5% tolerance
Applications
Voltage stabilization
BZG47.. , BZG47..A
Vishay Telefunken
15 811
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Power dissipation
Non repetitive peak surge
power dissipation
Junction temperature
R_thJA<100K/W, T_amb=25°C
t_p=100ms sq.pulse,
T_j=25°C prior to surge
Storage temperature range
Type
Symbol Value Unit
P_V
1.25
W
P_ZSM
50
W
T_j
150
°C
T_stg –65...+150 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction lead
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1a
mounted on epoxy–glass hard tissue, Fig. 1b
mounted on Al–oxid–ceramic (Al₂O₃), Fig. 1b
Electrical Characteristics
T_j = 25_C
Parameter
Test Conditions
Type
Forward voltage
I_F=0.2A
Symbol
R_thJL
R_thJA
R_thJA
R_thJA
Value
35
150
125
100
Unit
K/W
K/W
K/W
K/W
Symbol Min Typ Max Unit
V_F
1.2 V
Document Number 85623
Rev. 5, 06-Aug-99
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