BZG04_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Zener Diodes with Surge Current Specification

BZG04-Series
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
• Glass passivated junction
• High reliability
e3
• Stand-off Voltage range 8.2 V to 220 V
• Excellent clamping cabability
• Fast response time (typ. ≤ 1 ps from 0 to V_Zmin)
• Lead (Pb)-free component
15811
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Protection from high voltage, high energy transients
Mechanical Data
Case: DO-214AC
Weight: approx. 77 mg
Packaging Codes/Options:
TR / 1.5 k 7 " reel
TR3 / 6 k 13 " reel 6 k/box
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Power dissipation
R_thJA < 25 K/W, T_amb = 100 °C
P_diss
3
W
R_thJA < 100 K/W, T_amb = 50 °C
P_diss
1.25
W
Non repetitive peak surge power t_p = 10/1000 µs sq.pulse,
P_ZSM
300
W
dissipation
T_j = 25 °C prior to surge
Peak forward surge current
10 ms single half sine wave
I_FSM
50
A
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
- 65 to + 150
°C
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction lead
R_thJL
25
K/W
Junction ambient
mounted on epoxy-glass hard
R_thJA
150
K/W
tissue, Fig. 1a
mounted on epoxy-glass hard
R_thJA
125
K/W
tissue, Fig. 1b
mounted on Al-oxid-ceramic
R_thJA
100
K/W
(Al₂O₃), Fig. 1b
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
I_F = 0.5 A
Document Number 85594
Rev. 2.2, 15-Sep-05
Symbol
Min
Typ.
Max
Unit
V_F
1.2
V
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