BZD27C3V6P-M Datasheet, PDF (1/7 Pages) Vishay Siliconix – Zener Diodes with Surge Current Specification

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BZD27C3V6P-M to BZD27C200P-M
Vishay Semiconductors
Zener Diodes with Surge Current Specification
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
V_Z range nom.
3.6 to 200
Test current I_ZT
5 to 100
V_Z specification
Pulse current
Int. construction
Single
UNIT
V
mA
FEATURES
• Sillicon planar Zener diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• High temperature soldering: 260 °C/10 s at
terminals
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
BZD27C3V6P-M to
BZD27C200P-M
BZD27C3V6P-M to
BZD27C200P-M
BZD27C3V6P-M to
BZD27C200P-M-series-08
BZD27C3V6P-M to
BZD27C200P-M-series-18
TAPED UNITS PER REEL
3000 per 7" reel (8mm tape)
MINIMUM ORDER QUANTITY
15 000/box
10 000 per 13" reel (8 mm tape)
10 000/box
PACKAGE
PACKAGE NAME
DO-219AB (SMF)
WEIGHT
15 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Power dissipation
T_L = 80 °C
T_A = 25 °C ⁽¹⁾
Non repetitive peak surge power
dissipation ⁽²⁾
Junction to lead
100 μs square pulse
10/1000 μs waveform
(BZD27-C7V5P-M to BZD27-C100P-M)
10/1000 μs waveform
(BZD27-C110P-M to BZD27-C200P-M)
Junction to ambient air
Mounted on epoxy-glass PCB with 3 mm x
3 mm Cu pads ( 40 μm thick)
Junction temperature
Storage temperature range
Notes
(1) _{Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)}
(2) _{TJ = 25 °C prior to surge}
P_tot
P_tot
P_ZSM
P_RSM
P_RSM
R_thJL
R_thJA
T_j
T_stg
2300
800
300
150
100
30
180
150
- 55 to + 150
mW
mW
W
W
W
K/W
K/W
°C
°C
Rev. 1.2, 29-Nov-11
1
Document Number: 83307
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