BYWE29-50 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Ultrafast Rectifier

BYWE29-50, BYWE29-100, BYWE29-150, BYWE29-200
www.vishay.com
Vishay General Semiconductor
Ultrafast Rectifier
TO-220AC
BYWE29-xxx
PIN 1
2
1
PIN 2
CASE
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
t_rr
V_F
T_J max.
Package
8.0 A
50 V, 100 V, 150 V, 200 V
100 A
25 ns
0.8 V
150 °C
TO-220AC
Diode variations
Single die
FEATURES
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
MECHANICAL DATA
Case: TO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BYWE29-50
Maximum repetitive peak reverse voltage
V_RRM
50
Maximum RMS voltage
V_RMS
35
Maximum DC blocking voltage
V_DC
50
Maximum average forward rectified current
at T_C = 105 °C
I_F(AV)
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load
I_FSM
Operating and storage temperature range
T_J, T_STG
BYWE29-100
100
70
100
BYWE29-150
150
105
150
8.0
100
-65 to +150
BYWE29-200
200
140
200
UNIT
V
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL BYWE29-50 BYWE29-100 BYWE29-150 BYWE29-200
Maximum instantaneous
forward voltage
I_F = 20 A T_J = 25 °C
I_F = 8.0 A T_J = 150 °C
V_F ⁽¹⁾
1.3
0.8
Maximum DC reverse current
at rated DC blocking voltage
T_C = 25 °C
T_C = 100 °C
I_R
10
500
Maximum reverse recovery
time
I_F = 1 A, V_R = 30 V,
dI/dt = 100 A/μs, 
I_rr = 10 % I_RM
t_rr
25
Typical junction capacitance 4.0 V, 1 MHz
C_J
45
Note
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
UNIT
V
μA
ns
pF
Revision: 23-Feb-16
1
Document Number: 87922
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000