BYV28-50_10 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Ultra-Fast Avalanche Sinterglass Diode

BYV28-50, BYV28-100, BYV28-150, BYV28-200
Vishay Semiconductors
Ultra-Fast Avalanche Sinterglass Diode
949588
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Controlled avalanche characteristic
• Low forward voltage
• Ultra fast recovery time
• Glass passivated junction
• Hermetically sealed package
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Very fast rectification e.g. for switch mode power supply
PARTS TABLE
PART
BYV28-50
BYV28-100
BYV28-150
BYV28-200
TYPE DIFFERENTIATION
V_R = 50 V; I_FAV = 3.5 A
V_R = 100 V; I_FAV = 3.5 A
V_R = 150 V; I_FAV = 3.5 A
V_R = 200 V; I_FAV = 3.5 A
PACKAGE
SOD-64
SOD-64
SOD-64
SOD-64
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
BYV28-50
V_RSM
Peak reverse voltage, non repetitive
See electrical characteristics
BYV28-100
BYV28-150
V_RSM
V_RSM
BYV28-200
V_RSM
BYV28-50
V_R = V_RRM
Reverse voltage = repetitive peak
reverse voltage
See electrical characteristics
BYV28-100
BYV28-150
V_R = V_RRM
V_R = V_RRM
BYV28-200 V_R = V_RRM
Peak forward surge current
t_p = 10 ms, half sine wave
I_FSM
Repetitive peak forward current
I_FRM
Average forward current
I_FAV
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
I_(BR)R = 1 A, Tj = 175 °C
E_R
Junction and storage temperature
range
T_j = T_stg
VALUE
55
110
165
220
50
100
150
200
90
25
3.5
20
- 55 to + 175
UNIT
V
V
V
V
V
V
V
V
A
A
A
mJ
°C
www.vishay.com
72
For technical questions within your region, please contact one of the following: Document Number: 86044
[e-mail], [e-mail], [e-mail]
Rev. 1.7, 25-Aug-10