BYV26_05 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Ultra Fast Avalanche Sinterglass Diode

Ultra Fast Avalanche Sinterglass Diode
BYV26
Vishay Semiconductors
Features
• Glass passivated junction
• Hermetically sealed package
e2
• Very low switching losses
• Low reverse current
• High reverse voltage
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
949539
Applications
Switched mode power supplies
High-frequency inverter circuits
Mechanical Data
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
Parts Table
Part
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
Type differentiation
V_R = 200 V; I_FAV = 1 A
V_R = 400 V; I_FAV = 1 A
V_R = 600 V; I_FAV = 1 A
V_R = 800 V; I_FAV = 1 A
V_R = 1000 V; I_FAV = 1 A
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
Package
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Value
Unit
Reverse voltage = Repetitive see electrical characteristics
BYV26A
V_R = V_RRM
200
V
peak reverse voltage
BYV26B
V_R = V_RRM
400
V
BYV26C
V_R = V_RRM
600
V
BYV26D
V_R = V_RRM
800
V
BYV26E
V_R = V_RRM
1000
V
Peak forward surge current
t_p = 10 ms, half sinewave
I_FSM
30
A
Average forward current
I_FAV
1
A
Non repetitive reverse
avalanche energy
I_(BR)R = 1 A, inductive load
E_R
10
mJ
Junction and storage
temperature range
T_j = T_stg
- 55 to + 175
°C
Document Number 86040
Rev. 1.6, 14-Apr-05
www.vishay.com
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