BYV26EGP Datasheet, PDF (1/2 Pages) Vishay Siliconix – Glass Passivated Ultrafast Rectifier

BYV26DGP and BYV26EGP
New Product
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Ultrafast Rectifier
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
Patented*
0.300 (7.6)
0.230 (5.8)
®
1.0 (25.4)
min.
0.140 (3.6)
0.104 (2.6)
Dia.
Dimensions
in inches and
(millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306.
Features
Reverse Voltage 800 to 1000V
Forward Current 1.0A
• High temperature metallurgically bonded construction
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0.
• Cavity-free glass passivated junction
• Ultrafast recovery time for high efficiency
• Low forward voltage, high current capability
• Capable of meeting environmental standards of
MIL-S-19500
• Low leakage current • High surge current capability
• Specified reverse surge capability
• High temperature soldering guaranteed: 350°C/10 seconds,
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
Mechanical Data
Case: JEDEC DO-204AC, molded plastic over glass body
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.015 oz., 0.4 g
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
BYV26DGP BYV26EGP
Unit
Maximum repetitive peak reverse voltage
VRRM
800
1000
V
Maximum RMS voltage
VRMS
560
700
V
Maximum DC blocking voltage
VDC
800
1000
V
Maximum average forward rectified current
0.375" (9.5mm) lead length (See Fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10ms single half
sine-wave superimposed on rated load
IFSM
30
A
Non repetitive peak reverse energy (Note 1)
ERSM
10
mj
Typical thermal resistance (Note 2,3)
RΘJA
RΘJL
70
16
°C/W
Operating junction and storage temperature range
TJ, TSTG
–65 to +175
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Minimum avalanche breakdown voltage at 100µA
VBR
900
1100
V
Maximum instantaneous
TJ = 25°C
VF
2.5
forward voltage at 1.0A
TJ = 175°C
1.3
V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25°C
TA = 165°C
IR
5.0
150
µA
Max. reverse recovery time at IF=0.5A, IR =1.0A, Irr=0.25A
trr
75
ns
Typical junction capacitance at 4.0V, 1MHz
CJ
15
pF
Notes: (1) Peak reverse energy measured at IR = 400mA, TJ = TJ max. on inductive load, t = 20µs
(2) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, mounted on P.C.B. with 0.5 x 0.5” (12 x 12mm) copper pads
(3) Thermal resistance from junction to lead at 0.375” (9.5mm) lead length with both leads attached to heatsink
Document Number 88554
07-Mar-02
www.vishay.com
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