BYV26A_10 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Ultra Fast Avalanche Sinterglass Diode

BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass Diode
949539
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Very low switching losses
• Low reverse current
• High reverse voltage
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Switched mode power supplies
• High-frequency inverter circuits
PARTS TABLE
PART
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
TYPE DIFFERENTIATION
V_R = 200 V; I_FAV = 1 A
V_R = 400 V; I_FAV = 1 A
V_R = 600 V; I_FAV = 1 A
V_R = 800 V; I_FAV = 1 A
V_R = 1000 V; I_FAV = 1 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Reverse voltage = repetitive peak
reverse voltage
Peak forward surge current
Average forward current
Non repetitive reverse avalanche
energy
See electrical characteristics
t_p = 10 ms, half sine wave
I_(BR)R = 1 A, inductive load
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
V_R = V_RRM
V_R = V_RRM
V_R = V_RRM
V_R = V_RRM
V_R = V_RRM
I_FSM
I_FAV
E_R
Junction and storage temperature
range
T_j = T_stg
VALUE
200
400
600
800
1000
30
1
10
- 55 to + 175
UNIT
V
V
V
V
V
A
A
mJ
°C
MAXIMUM THERMAL RESISTANCE (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Junction ambient
l = 10 mm, T_L = constant
R_thJA
45
UNIT
K/W
Document Number: 86040 For technical questions within your region, please contact one of the following:
Rev. 1.7, 04-Aug-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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