BYT62 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Mesa Rectifier

Silicon Mesa Rectifier
Features
D Glass passivated junction
D Hermetically sealed package
D Controlled avalanche characteristic
D Low reverse current
BYT62
Vishay Telefunken
Applications
94 9539
High voltage rectifier
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Reverse voltage
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Non repetitive reverse
avalanche energy
x ^{tp=10ms, half sinewave}
T_amb=25°C, R_thJA 60K/W
I_(BR)R=1A, inductive load
Junction temperature
Storage temperature range
Maximum Thermal Resistance
T_j = 25_C
Parameter
Junction ambient
Test Conditions
l=10mm, T_L=constant
Electrical Characteristics
T_j = 25_C
Parameter
Forward voltage
Reverse current
Reverse breakdown voltage
Reverse recovery time
Test Conditions
I_F=200mA
I_F=1A
I_F=1A, T_j=175°C
I_F=1A, T_j=–40°C
V_R=V_RRM
V_R=V_RRM, T_j=175°C
V_R=V_RRM, T_j=–40°C
I_R=100mA
I_F=0.5A, I_R=1A, i_R=0.25A
Type
Type Symbol Value Unit
V_R
2400
V
=V_RRM
I_FSM
10
A
I_FAV
350
mA
E_R
60
mJ
T_j
175
°C
T_stg –55...+190 °C
Symbol
Value
Unit
R_thJA
60
K/W
Symbol Min Typ Max Unit
V_F
V_F
V_F
V_F
I_R
I_R
I_R
V_(BR)R
t_rr
2500
3.0 V
3.6 V
2.9 V
4.0 V
5 mA
250 mA
400 nA
V
5 ms
Document Number 86033
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack [phone]
1 (3)