BYT56_05 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Fast Avalanche Sinterglass Diode

Fast Avalanche Sinterglass Diode
BYT56.
Vishay Semiconductors
Features
• Glass passivated junction
• Hermetically sealed package
e2
• Low reverse current
• Soft recovery characteristics
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Very fast rectification and switching diode
949588
Mechanical Data
Case: SOD-64 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 858 mg
Parts Table
Part
BYT56A
BYT56B
BYT56D
BYT56G
BYT56J
BYT56K
BYT56M
Type differentiation
V_R = 50 V; I_FAV = 3 A
V_R = 100 V; I_FAV = 3 A
V_R = 200 V; I_FAV = 3 A
V_R = 400 V; I_FAV = 3 A
V_R = 600 V; I_FAV = 3 A
V_R = 800 V; I_FAV = 3 A
V_R = 1000 V; I_FAV = 3 A
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
Package
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Value
Unit
Reverse voltage = Repetitive see electrical characteristics
BYT56A
V_R = V_RRM
50
V
peak reverse voltage
BYT56B
V_R = V_RRM
100
V
BYT56D
V_R = V_RRM
200
V
BYT56G
V_R = V_RRM
400
V
BYT56J
V_R = V_RRM
600
V
BYT56K
V_R = V_RRM
800
V
BYT56M
V_R = V_RRM
1000
V
Peak forward surge current
t_p = 10 ms, half sinewave
I_FSM
80
A
Average forward current
on PC board
I_FAV
1.5
A
l = 10 mm
I_FAV
3
A
Junction and storage
temperature range
T_j = T_stg
- 55 to + 175
°C
Non repetitive reverse
avalanche energy
I_(BR)R = 0.4 A
E_R
10
mJ
Document Number 86032
Rev. 1.6, 13-Apr-05
www.vishay.com
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