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BYT56A_10 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Fast Avalanche Sinterglass Diode
BYT56A, BYT56B, BYT56D, BYT56G, BYT56J, BYT56K, BYT56M
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
949588
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
APPLICATIONS
• Very fast rectification and switching diode
PARTS TABLE
PART
BYT56A
BYT56B
BYT56D
BYT56G
BYT56J
BYT56K
BYT56M
TYPE DIFFERENTIATION
VR = 50 V; IFAV = 3 A
VR = 100 V; IFAV = 3 A
VR = 200 V; IFAV = 3 A
VR = 400 V; IFAV = 3 A
VR = 600 V; IFAV = 3 A
VR = 800 V; IFAV = 3 A
VR = 1000 V; IFAV = 3 A
PACKAGE
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Reverse voltage = repetitive peak
reverse voltage
Peak forward surge current
Average forward current
Non repetitive reverse avalanche
energy
See electrical characteristics
tp = 10 ms, half sine wave
On PC board
l = 10mm
I(BR)R = 0.4 A
BYT56A
BYT56B
BYT56D
BYT56G
BYT56J
BYT56K
BYT56M
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
IFAV
IFAV
ER
Junction and storage temperature
range
Tj = Tstg
VALUE
50
100
200
400
600
800
1000
80
1.5
3
10
- 55 to + 175
UNIT
V
V
V
V
V
V
V
A
A
A
mJ
°C
Document Number: 86032 For technical questions within your region, please contact one of the following:
Rev. 1.7, 30-Jul-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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