BYT51A_10 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Standard Avalanche Sinterglass Diode

BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
949539
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
APPLICATIONS
• Rectification diode
PARTS TABLE
PART
BYT51A
BYT51B
BYT51D
BYT51G
BYT51J
BYT51K
BYT51M
TYPE DIFFERENTIATION
V_R = 50 V; I_FAV = 1.5 A
V_R = 100 V; I_FAV = 1.5 A
V_R = 200 V; I_FAV = 1.5 A
V_R = 400 V; I_FAV = 1.5 A
V_R = 600 V; I_FAV = 1.5 A
V_R = 800 V; I_FAV = 1.5 A
V_R = 1000 V; I_FAV = 1.5 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Reverse voltage = repetitive peak
reverse voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Junction and storage temperature
range
See electrical characteristics
t_p = 10 ms, half sine wave
On PC board
l = 10mm
BYT51A
BYT51B
BYT51D
BYT51G
BYT51J
BYT51K
BYT51M
V_R = V_RRM
V_R = V_RRM
V_R = V_RRM
V_R = V_RRM
V_R = V_RRM
V_R = V_RRM
V_R = V_RRM
I_FSM
I_FRM
I_FAV
I_FAV
T_j = T_stg
Non repetitive reverse avalanche
energy
l_(BR)R = 1 A
E_R
VALUE
50
100
200
400
600
800
1000
50
9
1
1.5
- 55 to + 175
20
UNIT
V
V
V
V
V
V
V
A
A
A
A
°C
mJ
Document Number: 86028 For technical questions within your region, please contact one of the following:
Rev. 1.8, 25-Aug-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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