BYS13-90 Datasheet, PDF (1/4 Pages) Vishay Siliconix – ESD Safe - High Voltage Power Schottky - Rectifier

BYS13–90
Vishay Semiconductors
ESD Safe – High Voltage Power Schottky – Rectifier
Features
D High efficiency
D Low forward voltage drop
D Negligible switching losses
D Low reverse current
D High reverse surge capability
D High ESD capability
15 811
Applications
High frequency SMPS
Free wheeling diode in low voltage converters
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Type Symbol Value
Unit
Repeptive peak reverse voltage
Continuous reverse voltage
Average forward current
Non–repeptive surge forward current
ESD – IEC 1000–4–2
T_j=76°C, V_R = 90V
W ^{tp=10ms, half sinewave}
R = 330 , C = 150pF
V_RRM
90
V
V_R
90
V
I_FAV
1.5
A
I_FSM
75
A
ESD
20
kV
Junction and storage temperature range
T_j=T_stg –55...+150 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction lead
Junction ambient
m ^TL=constant
Epoxy–glass hard tissue (see figure 1) 35 m * 17mm²
copper area per electrode
m Epoxy–glass hard tissue (see figure 2) 35 m * 50mm²
copper area per electrode
Symbol Value Unit
R_thJL
25
K/W
R_thJA
150
K/W
125
Electrical Characteristics
T_j = 25_C
Parameter
Test Conditions
Forward voltage
Reverse current
Junction Capacitance
I_F=100mA
I_F=3A
I_F=3A T_j = 100°C
V_R=V_RRM
V_R=V_RRM, T_j=100°C
V_R=4V, f = 1MHz
Type
Symbol Min Typ Max Unit
430
V_F
850 950 mV
700 850
30 mA
I_R
5 mA
C_D
130
pF
Document Number 86065
Rev. 4, 25-Sep-00
www.vishay.com
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