BYS11-90 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Schottky Barrier Rectifier

Schottky Barrier Rectifier
Features
D High efficiency
D Low power losses
D Very low switching losses
D Low reverse current
D High surge capability
Applications
Polarity protection
Low voltage, high frequency rectifiers
BYS11–90
Vishay Semiconductors
15 811
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Reverse voltage=
Repetitive peak reverse voltage
Peak forward surge current
Average forward current
t_p=10ms, half sinewave
Junction and storage
temperature range
Type
Symbol Value
Unit
V_R=
V_RRM
90
V
I_FSM
30
A
I_FAV
1.5
A
T_j=T_stg –55...+150 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction lead
Junction ambient
T_L=constant
mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm² 35mm Cu
mounted on Al–oxid–ceramic (Al₂O₃), 50mm² 35mm Cu
Symbol Value Unit
R_thJL
25
150
K/W
R_thJA
125
100
Electrical Characteristics
T_j = 25_C
Parameter
Test Conditions
Forward voltage
Reverse current
I_F=1A
V_R=V_RRM
V_R=V_RRM, T_j=100°C
Type
Symbol Min Typ Max Unit
V_F
750 mV
100 mA
I_R
1 mA
Document Number 86014
Rev. 3, 08-Sep-00
www.vishay.com
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