BYM36A Datasheet, PDF (1/5 Pages) Galaxy Semi-Conductor Holdings Limited – FAST RECOVERY RECTIFIERS

BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
949588
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Glass passivated
• Hermetically sealed package
• Very low switching losses
• Low reverse current
• High reverse voltage
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Switched mode power supplies
• High-frequency inverter circuits
PARTS TABLE
PART
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
TYPE DIFFERENTIATION
V_R = 200 V; I_FAV = 3 A
V_R = 400 V; I_FAV = 3 A
V_R = 600 V; I_FAV = 3 A
V_R = 800 V; I_FAV = 2.9 A
V_R = 1000 V; I_FAV = 2.9 A
PACKAGE
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
BYM36A
V_R = V_RRM
Reverse voltage = repetitive
peak reverse voltage
See electrical characteristics
BYM36B
BYM36C
BYM36D
V_R = V_RRM
V_R = V_RRM
V_R = V_RRM
BYM36E
V_R = V_RRM
Peak forward surge current
t_p = 10 ms, half sine wave
I_FSM
BYM36A
I_FAV
BYM36B
I_FAV
Average forward current
BYM36C
I_FAV
BYM36D
I_FAV
BYM36E
I_FAV
Non repetitive reverse
avalanche energy
I_(BR)R = 1 A, inductive load
E_R
Junction and storage
temperature range
T_j = T_stg
VALUE
200
400
600
800
1000
65
3
3
3
2.9
2.9
20
- 55 to + 175
UNIT
V
V
V
V
V
A
A
A
A
A
A
mJ
°C
MAXIMUM THERMAL RESISTANCE (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Junction ambient
Lead length l = 10 mm, T_L = constant
R_thJA
25
On PC board with spacing 25 mm
R_thJA
70
UNIT
K/W
K/W
www.vishay.com
108
For technical questions within your region, please contact one of the following: Document Number: 86012
[e-mail], [e-mail], [e-mail]
Rev. 1.7, 25-Aug-10