BYG23T Datasheet, PDF (1/4 Pages) Vishay Siliconix – High Voltage Ultrafast Avalanche SMD Rectifiers

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BYG23T
Vishay General Semiconductor
High Voltage Ultrafast Avalanche SMD Rectifiers
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
I_F(AV)
1.0 A
V_RRM
1300 V
I_FSM
18 A
t_rr
75 ns
E_R
5 mJ
V_F at I_F = 1.0 A (T_A = 125 °C)
1.39 V
T_J max.
150 °C
TYPICAL APPLICATIONS
For use in high voltage, high frequency rectification specially
suited for freewheeling, clamping, snubbering in power
supply, ignition drive of HID, UHP and industrial ballast and
snubber for PDP TV power supply application.
FEATURES
• Glass passivated junction
• Low profile package
• Ideal for automated placement
• Low reverse current
• High reverse voltage
• Ultra fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current (fig.1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
I_F ⁽¹⁾
I_FSM
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I_(BR)R = 0.4 A, T_L = 25 °C
Maximum operating junction temperature
Storage temperature range
E_R
T_J
T_STG
Note
• Free air, mounted on recommended copper pad area
BYG23T
BYG23T
1300
1.0
18
5
150
- 55 to + 150
UNIT
V
A
A
mJ
°C
°C
Revision: 13-Oct-11
1
Document Number: 89429
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