BYG21M-E3-TR Datasheet, PDF (1/5 Pages) Vishay Siliconix – Fast Avalanche SMD Rectifier

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BYG21K-E3/HE3, BYG21M-E3/HE3
Vishay General Semiconductor
Fast Avalanche SMD Rectifier
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
I_R
V_F
t_rr
E_R
T_J max.
Package
1.5 A
800 V, 1000 V
30 A
1.0 μA
1.6 V
120 ns
20 mJ
150 °C
DO-214AC (SMA)
Diode variation
Single die
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Soft recovery characteristic
• Fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I_(BR)R = 1 A, T_J = 25 °C
Operating junction and storage temperature range
V_RRM
I_F(AV)
I_FSM
E_R
T_J, T_STG
BYG21K
BYG21M
BYG21K
BYG21M
800
1000
1.5
30
20
- 55 to + 150
UNIT
V
A
A
mJ
°C
Revision: 21-Aug-13
1
Document Number: 88961
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000