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BYD13DGP Datasheet, PDF (1/4 Pages) Vishay Siliconix – Avalanche Glass Passivated Junction Rectifier
New Product
BYD13DGP thru BYD13MGP
Vishay General Semiconductor
Avalanche Glass Passivated Junction Rectifier
SUPERECTIFIER®
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
200 V to 1000 V
IFSM
30 A
ERSM
7 mJ
VF
1.1 V, 1.2 V
IR
5.0 μA
TJ max.
175 °C
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Avalanche surge capability guaranteed
• Low forward voltage drop
• Low leakage current, typical IR less than 0.1 μA
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supply,
inverters, converters and freewheeling applications for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BYD13DGP BYD13GGP BYD13JGP BYD13KGP BYD13MGP UNIT
Device marking code
13DGP
13GGP
13JGP
13KGP
13MGP
Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
1000
V
Maximum DC blocking voltage
VDC
200
400
600
800
1000
V
Maximum average forward rectified current
0.375" (9.5 mm) lead length (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load
IFSM
30
A
Non-repetitive peak reverse avalanche energy
at L = 120 mH, TJ = TJ maximum prior to surge
ERSM
7
mJ
Maximum full load reverse current,
full cycle average, 0.375" (9.5 mm)
lead lengths at TA = 75 °C
IR(AV)
30
μA
Operating junction and storage
temperature range
TJ, TSTG
- 65 to + 175
°C
Document Number: 88913 For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000