BY228 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Damper diode

Silicon Mesa Rectifier
Features
D Glass passivated junction
D Hermetically sealed package
Applications
High voltage rectifier
Efficiency diode in horizontal deflection circuits
BY228
Vishay Telefunken
94 9588
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Type Symbol
Value
Unit
Reverse voltage
=Repetitive peak reverse voltage
V_R=V_RRM
1500
V
Peak forward surge current
t_p=10ms,
half sinewave
I_FSM
50
A
Average forward current
Junction temperature
Storage temperature range
I_FAV
3
A
T_j
140
°C
T_stg
–55...+150
°C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on PC board with spacing 37.5mm
R_thJA
70
K/W
Electrical Characteristics
T_j = 25_C
Parameter
Test Conditions
Forward voltage
Reverse current
Total reverse recovery time
I_F=5A
V_R=1500V
V_R=1500V, T_j=140°C
I_F=1A, –di_F/dt=0.05A/ms
Symbol Min Typ Max Unit
V_F
1.5 V
I_R
2 5 mA
I_R
140 mA
t_rr
20 ms
Document Number 86003
Rev. 2, 24-Jun-98
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