BPW77NA_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon NPN Phototransistor

BPW77NA, BPW77NB
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
94 8401
DESCRIPTION
BPW77 is a silicon NPN phototransistor with high radiant
sensitivity in hermetically sealed TO-18 package with base
terminal and glass lens. It is sensitive to visible and near
infrared radiation.
FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): Ø 4.7
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 10°
• Base terminal connected
• Hermetically sealed package
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW77NA
I_ca (mA)
7.5 to 15
BPW77NB
> 10
Note
Test condition see table “Basic Characteristics”
ϕ (deg)
± 10
± 10
ORDERING INFORMATION
ORDERING CODE
BPW77NA
BPW77NB
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
REMARKS
MOQ: 1000 pcs, 1000 pcs/bulk
MOQ: 1000 pcs, 1000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Collector base voltage
Collector emitter voltage
Emitter base voltage
Collector current
Collector peak current
Total power dissipation
Junction temperature
t_p/T = 0.5, t_p ≤ 10 ms
T_amb ≤ 25 °C
Operating temperature range
Storage temperature range
Soldering temperature
t≤5s
Thermal resistance junction/ambient
Connected with Cu wire, 0.14 mm²
Thermal resistance junction/gase
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
R_thJC
λ_0.1 (nm)
450 to 1080
450 to 1080
PACKAGE FORM
TO-18
TO-18
VALUE
80
70
5
50
100
250
125
- 40 to + 125
- 40 to + 125
260
400
150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
K/W
www.vishay.com
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For technical questions, contact: [e-mail]
Document Number: 81527
Rev. 1.5, 08-Sep-08